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Band discontinuities for the (110)-interfaces of semiconductor heterojunctions
Affiliation:1. Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, PR China;2. Department of Physics, New Jersey Institute of Technology, New Jersey, NJ 07102, USA;1. School of Chemical Engineering, Anhui University of Science and Technology, Huainan, Anhui 232001, PR China;2. School of Materials Science and Engineering, Anhui University of Science and Technology, Huainan, Anhui 232001, PR China;3. State Key Lab of Inorganic Synthesis & Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, PR China;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;1. Departamento de Física, Universidade Federal do Maranhão, 65080-805 SãoLuís, MA, Brazil;2. Instituto Federal do Maranhão, Campus São Luis-Centro Histórico, 65010-500 SãoLuís, MA, Brazil;3. Departamento de Química Analítica, Instituto de Química de Araraquara, UNESP e Univ Estadual Paulista, Araraquara, SP 14801-970, Brazil;1. School of Physics and Optoelectronics, Xiangtan University, Hunan, 411105, China;2. National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University, 411105, Hunan, China;3. Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan, 411105, China
Abstract:We present a consistent tight-binding calculation for different (110) semiconductor heterojunctions. We compare the valence-band discontinuities obtained in a full consistent treatment with the corresponding ones obtained by imposing the local charge neutrality conditions. Our results show a good agreement with the experimental evidence.
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