Photoconductivity and photoreflectance studies of quantum-wells and superlattices |
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| Institution: | 1. Fujian Provincial Key Laboratory of Big Data Mining and Applications, Fujian University of Technology, Fuzhou, Fujian 350118, China;2. Intelligent Information Processing Research Center, Fujian University of Technology, Fuzhou, Fujian 350118, China;3. Fujian Key Lab for Automotive Electronics and Electric Drive, Fujian University of Technology, Fuzhou, Fujian 350118, China;4. School of Computer Science and Mathematics, Fujian University of Technology, Fuzhou, Fujian 350118, China;5. College of IOT Engineering, Hohai University, Changzhou, Jiangsu 213022, China;1. College of Instrumentation & Electrical Engineering, Jilin University, Changchun 130021, China;2. SHRIMP Center, Institute of Geology Chinese Academy of Geological Sciences, Beijing 100037, China;1. Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013, India;2. Bhabha Atomic Research Centre, Mumbai, Maharashtra 400085, India;1. Institute of Materials Physics and Technology, Hamburg University of Technology, Hamburg, Germany;2. Institute of Materials Research, Materials Mechanics, Helmholtz-Zentrum Geesthacht, Geesthacht, Germany |
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| Abstract: | We have performed room-temperature in-plane photoconductivity and photoreflectance measurements on various types of GaAs/AlAs quantum-wells and superlattices. The photoconductivity spectra of samples with even a few (1 to 7) quantum-wells show sharp excitonic structures superimposed on the bulk GaAs signal, and provide a useful alternative to absorption spectra. The photoreflectance spectra are demonstrated experimentally to follow the third derivative of the photoconductivity spectra, as previously reported for bulk materials, even though the mechanism of photoreflectance must be different in the present two-dimensional systems. |
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