On the zero temperature statistics for the density of gap states of hydrogenated amorphous silicon |
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| Affiliation: | 1. Kelley School of Business, Indiana University, Bloomington, IN 47405, United States;2. College of Business, University of Louisville, Louisville, KY 40292, United States;1. Laboratory of Welding Technology, Lappeenranta-Lahti University of Technology LUT, P.O. Box 20, FI-53851 Lappeenranta, Finland;2. Laboratory of Steel Structures, Lappeenranta-Lahti University of Technology LUT, P.O. Box 20, FI-53851 Lappeenranta, Finland;3. Laboratory of Laser and Additive Manufacturing Processes, Lappeenranta-Lahti University of Technology LUT, P.O. Box 20, FI-53851 Lappeenranta, Finland;1. Fox Chase Cancer Center, 333 Cottman Avenue, Philadelphia, PA 19111, USA;2. Children''s Hospital of Philadelphia, 3535 Market Street, Room 1177, Philadelphia, PA 19104, USA;3. Behavioral Research Departments of Medicine and Urology, North Shore-Long Island Jewish Health System, United States;4. UCLA Cousins Center for Psychoneuroimmunology, 300 Medical Plaza Driveway, Los Angeles, CA 90095, USA;5. UVA School of Medicine, Blake Center 1224 W. Main St., Suite 400B, P.O. Box 80082, Charlottesville, VA 22908-0821, USA;6. Morra Communications, 1 Platt Street, Milford, CT 06460, USA;7. Denver Health and Hospitals, University of Colorado Denver, 777 Bannock Street, MC1925, Denver, CO 80204, USA |
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| Abstract: | It is shown that one may obtain much larger value of density-of-states in the gap of hydrogenated amorphous silicon than real value, if the zero temperature statistics is used in studying that material. So care must be taken when one employs zero temperature statistics in studying the density-of-states of amorphous materials. |
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