Energy relaxation of an electron-hole plasma in semiconductors |
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| Institution: | 1. Herbert Gleiter Institute of Nanoscience, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;2. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;3. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi''an 710072, China;4. Institute of Materials Physics, University of Muenster, Wilhelm-Klemm Street 10, Muenster 48149, Germany;5. Key Laboratory for Light-weight Materials, Nanjing Tech University, Nanjing 210009, China;1. Herbert Gleiter Institute of Nanoscience, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;2. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi''an 710072, China;3. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;1. MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;2. State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China;3. State Key Laboratory of Environmental-Friendly Energy Materials, School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, China;4. Department of Advanced Energy Materials, College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China |
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| Abstract: | We calculate the energy relaxation of an electron-hole plasma created by a short laser pulse in semiconductors like Si and GaAs in two cases: (i) when the carrier-carrier collision time is much shorter than the carrier-phonon one, so that a carrier temperature Tc exists. We give the variation of Tc with time; (ii) when there is no carrier temperature and the initial energy distribution is a peaked function of width Δ. We give the time evolution of the system when Δ is much larger and much smaller than the phonon energy. |
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