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Quantum limit behavior of the magnetoresistance in Hg1-x-yCdxMnyTe alloys subjected to a high pulsed magnetic field
Institution:1. Université Paris-Saclay, ENS Paris-Saclay, CNRS, Centre Borelli UMR9010, avenue des Sciences, F-91190 Gif-sur-Yvette, France;2. Department of Mathematics, University of California, Berkeley, Berkeley, CA 94720, USA;3. Academy of Mathematics and Systems Science, Chinese Academy of Sciences, Beijing, 100190, China
Abstract:The transverse magnetoresistance and the Hall effect of a quaternary alloy semimagnetic semiconductor Hg1-x-yCdxMnyTe were measured in high pulsed magnetic fields up to 30T. The investigation of the asymptotic power law (‘p(B) ∝ Bα) in a quantum limit regime revealed that the short range type scattering is enhanced with increasing Mn composition, suggesting the scattering associated with the localized magnetic moment of Mn.
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