Impurity bands in Ga1-xAlxAs/GaAs quantum wells |
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| Institution: | 1. Department of Physics, College of Sciences & Humanities-Jubail, Imam Abdulrahman Bin Faisal University, Saudi Arabia;2. Basic and Applied Scientific Research Center, Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia;3. Department of Physics, College of Sciences, Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia;4. Department of Chemical & Environmental Engineering, Materials Science & Engineering Program, Department of Physics & Astronomy, Department of Chemistry, University of California-Riverside, Riverside, CA, USA |
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| Abstract: | We calculate the Density-of-States (DOS) for electrons bound to impurities in a thin sheet inside a Ga1-xAlxAs/GaAs quantum well. Impurities are considered at the center, midway to the interface and at the interface of the GaAs layer. It is shown that for reasonable impurity concentrations an impurity band appears separated from the lowest subband. The bandwidth is comparable with that obtained due to diagonal disorder assuming a uniform distribution inside the whole well. |
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