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Calculation of rheed from stepped Si(001) for interpretation of rheed oscillations during MBE |
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| Institution: | 1. School of Nursing, School of Public Health, University of Michigan, Ann Arbor, MI;2. School for Environment and Sustainability, University of Michigan, Ann Arbor, MI;3. College of Nursing, Montana State University, Bozeman, MT;1. Pediatric Hospital Medicine Fellow, Division of Hospital Medicine, Department of Pediatrics, Seattle Children''s Hospital, University of Washington, 4800 Sand Point Way NE, FA.2.115, Seattle, Washington 98105, USA;2. Division of Hospital Medicine, Department of Pediatrics, Children''s Hospital Los Angeles, Keck School of Medicine, University of Southern California, Los Angeles, California, USA |
| Abstract: | RHEED intensities from stepped Si(001) surfaces are calculated to show the azimuthai dependence of RHEED intensity oscillations during Si MBE on a single domain of Si(001). The results explain why different intensities are observed when the incident beam azimuth is along the 110] and the 1̄10] directions and they are consistent with recently reported experimental results. In addition the results of the calculations indicate that the preferred island growth direction is perpendicular to the bonding direction between the atoms in the growing layer and the underlying substrate layer. |
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