Time-dependent chemisorption on a semiconductor surface |
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| Institution: | 1. Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km. 107, Apdo. Postal 14. Carretera Tijuana-Ensenada, Ensenada, Baja CA, Mexico;2. Facultad de Ciencias Físico Matemáticas, Universidad Autónoma de Nuevo León, 66451, San Nicolas de los Garza, Nuevo León, Mexico;3. Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam;4. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam |
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| Abstract: | The microscopic aspects of interfacial growth are only crudely accessible to experiment. We have therefore developed a technique for computer-experimental studies of atoms and molecules deposited on solid surfaces, in which forces are determined from the electronic structure rather than atomic potentials. Here we report simulations of Cl, O, Se, N, As, Si, Ge, Al, Ga, Zn, Hg, Cu, and Au on the (1 1 0) surface of GaAs. The results exhibit non-trivial variety in both the dynamics and final bonding sites. |
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