Nitrogen doping in hydrogenated amorphous silicon |
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| Affiliation: | 1. Imec, Kapeldreef 75, 3001 Leuven, Belgium;2. Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;1. Research Center for Ubiquitous MEMS and Micro Engineering, National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki, 305-8564, Japan;2. Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26 Nishi-waseda, Shinjuku, Tokyo, 169-0051, Japan;3. Collaborative Research Center, Meisei University, 2-1-1 Hodokubo, Hino, Tokyo, 191-8506, Japan;4. Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba, 278-8510, Japan;1. Department of Mechanical Engineering, Indian Institute of Technology, Bombay, India;2. Okmetic Oyj, Vantaa, Finland;1. Department of Chemistry, Panjab University, Chandigarh 160014, India;2. Department of Chemistry, College of Science and Arts, Najran University, P.O. Box-1988, Najran 11001, Kingdom of Saudi Arabia;3. Promising Centre for Sensors and Electronic Devices (PCSED), Najran University, P.O. Box-1988, Najran 11001, Kingdom of Saudi Arabia;4. Department of Chemical Engineering and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;5. Dr.S.S.B University Institute of Chemical Engineering & Technology, Panjab University, Chandigarh 160014, India |
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| Abstract: | A direct evidence of substitutional doping in ion beam deposited amorphous hydrogenated silicon by nitrogen is presented. From the analysis of infrared (IR) absorption spectra and Si-2p core level shape, measured with X-ray photoelectron spectroscopy (XPS), the preferential tendency of nitrogen to go in for three-fold coordination at higher concentration and tetrahedral bonding at lower concentration (⩽4 at %) is established. XPS technique has been used for the first time to deduce the upper limit for substitutional solid solubility of the impurity. |
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