首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Pulsed KrF laser deposited GaN/TiN/Si(111) heterostructures by sequential TiN and liquid Ga laser ablation
Authors:CM Rouleau  S Kang and DH Lowndes
Abstract:GaN/TiN heterostructures were deposited on 4° miscut Si(111) substrates by pulsed KrF laser ablation of TiN through vacuum, followed by reactive pulsed KrF laser ablation of liquid Ga through 70-75 mTorr of microwave-activated NH3. Deposition temperatures of 950 °C and 1050 °C were employed for the TiN layer while 900 °C was employed for the GaN layer. The targets were positioned 5 cm from the substrate and ablated by using a reimaging beamline at a nominal energy density of 3-4 J/cm2. X-ray diffraction (XRD) revealed a highly textured heterostructure with GaN(0001)//TiN(111)//Si(111) and with a rocking curve width for both GaN(0001) and TiN(111) equal to ~1.1°. The mosaic spread through the TiN(001) reflection was ~1.3°, whereas that of the GaN(101_1) was undetectable because of low S/N. Scanning electron microscopy revealed large oriented 10 7m-sized hexagonal crystallites decorating large depressions in the TiN film with many smaller pits also present. The effect of substrate processing and TiN film processing on pit formation was explored.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号