Quantum galvanomagnetic properties of n-type inversion layers on Si(100) MOSFET

Transverse magnetoconductivity σ_xx and Hall effect in n-type inversion layers of Si(100) MOSFET are measured for various source-drain fields between 0.08 and 40 V/cm under magnetic fields up to 150 kOe at 1.4 K. Conductivity peaks in low Landau levels are in good agreement with theory. Effect of the source-drain field in the magnetoconductivity is found to be very important in higher Landau levels as well as in the appearance of the lowest Landau level peak. Immobile electrons are clearly observed in conductivity bottoms. Electrode geometry effect for Hall effect measurement under strong magnetic fields is discussed.