Effective threshold energy for pair production in nonpolar semiconductors |
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| Authors: | R. Chwang C.R. Crowell |
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| Affiliation: | Departments of Electrical Engineering and Materials Science, University of Southern California, Los Angeles, Ca. 90007, U.S.A. |
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| Abstract: | A streaming model (high field) analysis is given for the average energy for and the probability of electron-hole pair production in a semiconductor when a quadratically energy dependent impact ionization cross-section exists above a threshold energy and competes with a nonpolar optical phonon scattering mechanism. A power series expansion method and tabulated results are provided to treat the resulting probability integrals of the form ∫0∞xn exp {?(βx + x3)}dx. |
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