On the nonlinearity of the P(V) characteristics of heavily doped semiconductors |
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Authors: | A.A. Grinberg A.A. Kastalskii |
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Affiliation: | A.F. Ioffe Physico—Technical Institute, Leningrad K-21, USSR |
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Abstract: | The interrelation between the hydrostatic pressure P and the relative change of volume V in heavily doped semiconductors with a band structure containing several non-equivalent minima (AIIIBV type) is considered.It is shown that under the electron transition from a low central minimum into “heavy” subsidiary minima the P(V) dependence becomes superlinear.The possibility of the appearance in this case of a spontaneous deformation with a significant electron redistribution between the central and the subsidiary minima is treated. |
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