Preparation and TG—DTA analysis of manganese silicon nitride |
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Authors: | Robert Pompe |
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Institution: | Department of Inorganic Chemistry, Chalmers University of Technology and University of Göteborg. P.O. Box, S-402 20 Göteborg 5 Sweden |
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Abstract: | Manganese silicon nitride was prepared quantitatively as a precipitated phase by treating a Mn; Si-alloy (Mn: 1.84 w/o, Si: 1.12 w/o) in a mixture of 2% NH3 and H2 at 700°C. Nitriding was carried out in situ in a thermobalance and the nitrogen uptake was recorded as a function of time. The nitride phase was isolated and investigated by means of the combined TG-DTG-DTA technique both in an atmosphere of nitrogen at 25–1600°C and in a mixture of Ar+O2 (pO2 = 0.20 atm) at 25–1000°C. In the nitrogen atmosphere MnSiN2 appears to be stable up to 1000°C. Oxidising the nitride in the Ar/O2 mixture caused three distinct exothermic processes to occur at characteristic temperatures. The final oxidation products as identified by diffractometry and IR-spectroscopy are manganese oxide silicate (braunite) and silicon dioxide. |
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Keywords: | To whom correspondence should be addressed |
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