Anomalous magnetoresistance and hall effect in iron alloys of the layer structure TaSe2

Resistance, magnetoresistance and Hall effect measurements have revealed a variety of eletronic changes induced in single crystals of TaSe₂ when alloyed with iron in concentrations from 0–10 at.%. Both substitutional and excess iron alloys have been studied and in each case different phases of TaSe₂ are produced below the growth temperature depending on the iron concentration. Resistance minima, anomalous Hall effects, negative magnetoresistance, and superconductivity can all be observed in this system.