Quantum properties of strong accumulation layers on ZnO surfaces |
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Authors: | D. Eger A. Many Y. Goldstein |
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Affiliation: | The Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem, 91000 Israel |
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Abstract: | Extremely strong accumulation layers with surface electron densities ΔN approaching 1014 cm?1 have been achieved on ZnO surfaces in contact with an electrolyte. Quantization effects, which are very pronounced in such narrow (?10 Å) layers, are studied by measurements of ΔN versus surface barrier height Vs. Comparison of the results with self-consistent calculations shows very good agreement up to ΔN = 2 × 1013 cm?2. Deviations observed at higher ΔN are probably associated with the huge electric fields (~107 V/cm) experienced by the surface electrons. |
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