Hall effect in n-type GaS

Hall effect measurements have been performed for the first time on n-type GaS single crystals, grown buy the Bridgam-Stockbarger method. Electrical properties are dominated by a donor centre at 0.52 eV, with a concentration of 2.3 × 10¹⁶cm^–3. The conduction band density-of-states effective mass has been estimated to be 1.3m_e.The low temperature conduction is compatible with a hopping process with an activation energy of 0.15 eV.