Far infrared reflectivity of V3Si

The change in reflectivity of a transporming sample of V₃Si between 19 and 11.5 K exhibits not only the expected superconducting gap behavior (at 4 < ?ω < 6 meV) but unusual structure between 6 and 25 meV. One possible cause is the Holstein absorption process which would indicate an unexpected peak in the phonon parameter α²F at 6 ± 2 meV. Data at 19 and 30 K show that no change in reflectivity due to the structural transformation (～ 21 K) occurs to within ≈ $\text{1}\text{2}\text{\%}$ over the same energy range.