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The electron distribution in superconducting alloys: I. Analysis of V3Si at room temperature
Authors:J.-L. Staudenmann  P. Coppens  J. Muller
Affiliation:1. Département de Physique de la Matière Condensée et Laboratoire Interdisciplinaire de Cristallographie aux Rayons - X, 32 Bd. d''Yvoy, 1211 Genève 4, Switzerland;2. C.N.R.S., Laboratoire des Rayons X, B.P. 166, 38042 Grenoble, France;3. C.N.R.S., Laboratoire des Rayons X, B.P. 166, 38042 Grenoble, France;4. Chemistry Department, State University of New York at Buffalo, Buffalo, NY 14214, U.S.A.
Abstract:Accurate X-ray diffraction data are used to obtain the charge distribution in the superconducting alloy V3Si. The main interaction is found to be strong covalent bonding between adjacent vanadium atoms within the infinite chains. Integration of the charge around the Si and V atoms leads to a best estimate of 1.8–2.4 electrons for the charge transfer from the silicon to the vanadium atoms.
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