Determination of nonradiative decay rate in electron-hole drops in Ge at 1.6°K |
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| Authors: | RF Leheny J Shah M Voos |
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| Institution: | Bell Telephone Laboratories, Holmdel, NJ 07733, U.S.A. |
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| Abstract: | We show that microwave photoconductivity measurements of optically excited carriers in Ge at 1.6°K can be used to determine the importance of nonradiative recombination within electron-hole liquid drops. Our results show that the nonradiative lifetime is 80 μsec from which we calculate a radiative efficiency of 0.5 ± 0.1 for the condensed phase. |
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