Surface cyclotron resonance in Si under uniaxial stress |
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Authors: | P Stallhofer JP Kotthaus JF Koch |
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Institution: | Physik-Department, Technische Universität München, 8046 Garching, West Germany |
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Abstract: | The cyclotron resonance of inversion-layer electrons on (100)p-type Si is found to depend sensitively on an externally applied compressive stress. At low temperatures (T ? 10 K) we observe a considerable increase of the cyclotron mass m1c with stress S along the 001] direction. The effect is most strongly observed at low electron densities ns. For and ns~2 × 1011cm-2 we obtain instead of the expected 0.2m0. Along with this change of a strong narrowing of the resonance is noted. Raising the temperature gives an additional ns- dependent increase of . |
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