Spin relaxation of conduction electrons in GaAs |
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| Authors: | A.H. Clark R.D. Burnham D.J. Chadi R.M. White |
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| Affiliation: | Department of Physics, University of Maine at Orono, Orono, ME 04473, U.S.A.;Xerox Palo Alto Research Center, Palo Alto, CA 94304, U.S.A. |
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| Abstract: | We have used optical spin orientation techniques to measure T1 of conduction electrons in GaAs (NinA ≈ 1017 cm-3) for 4.7 K ? T ? 200 K. From Hall effect measurements we estimated the electron momentum relaxation time τp. For 50 K ? T ? 200 K, the product T1τp agrees with our earlier order of magnitude estimate of the D'yakonov-Perel' mechanism, in which band structure induced precession is strongly narrowed by momentum relaxation. The Elliott mechanism is one to two orders of magnitude weaker. |
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