Influence of hydrogen on PtSiO2Si structures |
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Authors: | I. Lundström T. DiStefano |
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Affiliation: | IBM Thomas J. Watson Research Center, Yorktown Heights, NY, U.S.A. |
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Abstract: | It is shown that hydrogen in the ambient gives rise to a dipole layer at the PtSiO2 interface and to drifting charges in the oxide. These reversible effects were studied with internal photoemission, polarisation currents and quasistatic C(V)-measurements. |
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