Evidence for mobility domains in (100) silicon inversion layers |
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| Authors: | I. Eisele H. Gesch G. Dorda |
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| Affiliation: | 1. Forschungslaboratorien der Siemens AG, München, Germany |
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| Abstract: | In proof of the existence of domains with different mobilities measurements of Shubnikov-de Haas oscillations, piezoresistance, and transverse “Hall” field due to mobility anisotropy are provided. The energy splitting between the ground state subbands of different valleys has been determined. |
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