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Photoluminescent detection of the impurity band in Si(P)
Authors:JA Rostworowski  MLW Thewalt  RR Parsons
Institution:The Department of Physics, University of British Columbia, Vancouver, B.C., Canada V6T 1W5
Abstract:A new photoluminescent band in the spectra of phosphorus-doped silicon at concentrations near the Mott transition is reported. It is attributed to the recombination of an electron in the impurity band with a free hole.
Keywords:
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