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The current-voltage characteristics of field-effect transistors with short channels |
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| Authors: | K. Hess G. Dorda C.T. Sah |
| Affiliation: | Ludwig Boltzmann Institut für Festkörperphysik and Institut für Angewandte Physik der Universität, A-1090 Wien, Strudlhofgasse 4, Austria;Forschungslaboratorium der Siemens AG, München, Germany;Department of Electrical Engineering, University of Illinois, Urbana, IL 61801, U.S.A. |
| Abstract: | The current-voltage characteristics of MOS field-effect transistors is investigated theoretically and experimentally in the region of extremely high drain electric fields ED using the electron temperature concept in the classical three-dimensional theory. It is found that the drain field at which the drain current becomes non-ohmic on the basis of hot electron effects is related to the surface field Ezs by ED～√Ezs. Other expressions for the field dependent mobility are also given which allow the construction of the current-voltage characteristics. |
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