Spin-dependent recombination in a silicon p-n junction

Like the spin-denendent photoconductivity in pure silicon, the current of a silicon n⁺-p junction is found to be affected by electron spin resonance. The experiment shows that the same centers are responsible for the recombination in the diode and in pure silicon, that only the recombination in the space-charge region of the junction is spin-dependent and that the effect in this region is very large. A tentative model for the electron-hole recombination in silicon is proposed.