EHD-photoluminescence kinetics in doped Ge

Measurements of the LA-phonon assisted line kinetics of the EHD photoluminescence in As- and Sb-doped germanium with impurity concentrations n_D = 10¹⁵ ? 10¹⁷ cm^?3 are presented. These kinetics are found to be strongly dependent on the excitation level at 4.2 K. From the experimental results and a simplified kinetic equation the EHD “diffusion length” in Ge:As sample with n_D = 2 × 10¹⁶ cm^?3 is estimated to be L_D ? 0.34 mm which is consistent with previous results.