Photovoltage studies of n-type InP (100)

The transient photovoltage signals of n-type InP(100) have been studied by the retarding potential electron beam technique and are a sensitive function of several experimental parameters. The photovoltage decreases as the duration of the light exposure, and/or the intensity of the light is decreased. The photovoltage decreases sharply at energies less than the bandgap energy, which is temperature dependent, and also shows considerable structure at energies above the bandgap energy. The photovoltage is also sensitive to changes in the surface composition. Both the photovoltage and the work function decrease sharply after Ar bombardment.