On the absorption of infrared radiation by electrons in semiconductor inversion layers |
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Authors: | S.J. Allen D.C. Tsui B. Vinter |
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Affiliation: | Bell Laboratories, Murray Hill, NJ 07974, U.S.A.;IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A. |
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Abstract: | Resonances in the inversion layer for infrared fields normal to the interface do not occur at the electric subband splittings. They are shifted from the subband splittings by resonant screening of the infrared field. The corrections for (100) Si surfaces are shown to be comparable to the shifts ascribed to many-body effects. |
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