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Ultrasonic attenuation due to the neutral acceptor Mn in GaAs
Authors:K. Laβmann  Hp. Schad
Affiliation:Max-Planck-Institut für Festkörperforschung, Heilbronnerstrasse 69, 7000 Stuttgart 1, Deutschland
Abstract:We report on measurements of the ultrasonic attenuation in GaAs:Mn at frequencies between 400 and 2000 MHz and at temperatures between 1 and 35K. The results indicate that there is a level 3 meV above the acceptor ground state.
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