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De-excitation processes near the surface of ion bombarded SiO2 and Si
Authors:P.J Martin  A.R Bayly  R.J Macdonald  N.H Tolk  G.J Clark  J.C Kelly
Affiliation:Department of Physics, The Australian National University, Canberra, Australia 2601;Bell Telephone Laboratories, Murray Hill, New Jersey 07974, USA;Division of Mineral Physics, CSIRO, North Ryde, NSW, Australia;Department of Physics, University of New South Wales, Kensington, NSW, Australia
Abstract:Ion bombardment induced secondary ion and optical excitation from oxide coated Si has been studied as the oxide layer is eroded away. By comparing ion and photon yields, a model for the role of resonant and Auger electron transitions in the neutralisation and de-excitation of the sputtered atoms and ions has been suggested.
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