Deconvolution method for composition profiling by Auger sputtering technique

Some of the sputter broadening effects on profile measurements using the Auger sputtering technique have been quantitatively investigated for $\text{Ag}\text{Au}$ and $\text{Cu}\text{Ni}$ systems. Two methods have been used to measure the resolution function as a function of the sputter distance for these two systems. The broadening can be separated into contributions from original surface roughness and sputtering effects, the latter amounting to about 7% of the sputter depth for $\text{Cu}\text{Ni}$ and 14% for $\text{Ag}\text{Au}$ interfaces. Based on the measured resolution function, a deconvolution method has been developed to facilitate the retrieval of the actual profile from the observed profile by reducing the sputter broadening. Using this method, we found that the measured interfacial profile can be substantially sharpened. The implications of using the deconvolution method for interdiffisuion studies in thin films are discussed.