Dependence on substrate bias of the effective mass and dingle temperature of electrons in the surface inversion layer of silicon

The amplitude of the quantum oscillations in the magnetoconductance of a silicon inversion layer has been studied as a function of gate voltage V_g, for different values of the temperature T, applied magnetic field strength H and substrate bias V_s. By analyzing the amplitude of the oscillations at fixed V_g and V_g as a function of T and H, the dependence of the cyclotron effective mass m¹ and the Dingle temperature T_D on V_g and V_s can be obtained. The dependence of m¹ on V_g for different values of V_s is compared with the prediction of theory.