用于VLSI的新型介质膜界面陷阱的特征

采用雪崩热电子注入技术和高频Ｃ－Ｖ准静态Ｃ－Ｖ特性测试,研究了新型快速热氮化的ＳｉＯｘＮｙ介质膜界面陷阱的特征,侧重于研究界面陷阱的特性与分布。结果表明：这种ＳｉＯｘＮｙ薄膜禁带中央界面陷阱密度随氮化时间的分布变化呈现”回转效应“,且存在着不同类型、密度悬殊很大的电子陷阱、指出雪崩热电子注入过程中在Ｓｉ／ＳｉＯｘＮｙ界面上产生两种性质不同的快界面态陷阱;给出了这两种界面态陷阱密度在禁带中能量的分布

FEATURES OF INTERFACE TRAP OF NEW DIELECTRIC FILM USED FOR VLSI

This paper studies the interface trap features of novel thin rapid thermal nitrided SiOxNy film by the technique of avalanche hot-electron injection and the measurements of high frequency C-V and (luasi-static C-V characteristics. Our aims are to study these distributions and characteristics of the interface trap. The research results show that the distribution relationship of midgap interface trap density for the thin SiOxNy film with nitridation time presenting "turnaround effect". The different kinds of electronic traps,existing in the thin film and having disparity densities, have been observed. Results indicate that two kinds of fast interface traps, which have different properties, are generated in the Si/SiOxNy interface during avalanche hot-electron injection. The distribution on the density of two interface traps with forbidden band energy is provided. A weakly "N" type distribution relationship of the midgap interface trap density with the avalanche injection dose is also given. The discussions and analyses of these research results are also made in this paper.