Realization of dual,tunable, ordinary- and quantized-Hall resistances in doubly connected GaAs/AlGaAs heterostructures

An experimental configuration based on gated, double boundary GaAs/AlGaAs devices provides the first demonstration of dual distinct, tunable Hall resistances in the same sample over the weak- and strongmagnetic field limits, including the simultaneous observability of dual quantized Hall effects of dissimilar filling factors. These experiments suggest that the ordinary Hall resistance examined in experiment is essentially a topological resistance determined by connectivity, which need not reflect all “local” values of the off-diagonal resistivity, θ _M ρ _xy .