Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application |
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| Authors: | M Ahmetoglu B Kucur IA Andreev EV Kunitsyna MP Mikhailova YuP Yakovlev |
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| Institution: | 1. Department of Physics, Uludag University, 16059 Görukle, Bursa, Turkey;2. Ioffe Physico-Technical Institute, RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia;1. School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Republic of Korea;2. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Republic of Korea;1. Ioffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, Russian Federation;2. IoffeLED, Ltd., 26 Politekhnicheskaya, St Petersburg 194021, Russian Federation;1. Physics department, Lancaster University, Lancaster LA1 4YB, United Kingdom;2. Department of physics, University of Warwick, Coventry CV4 7AL, United Kingdom;3. Engineering department, Lancaster University, Lancaster LA1 4YW, United Kingdom;1. Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea;2. Korea Advanced Nano Fab Center, Suwon 16229, South Korea |
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| Abstract: | The electrical end optical characteristics of a type II double heterojunction (DH) in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were studied. An analysis of the photodiodes performance through the investigation into electrical and optical characteristics was carried out. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results show that at the low temperature region, the tunneling mechanism of the current flow dominates in both forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V, the reverse current was defined by generation of carriers in the depletion region. Have been estimated the temperature coefficient of the shift of the long-wavelength edge of the spectral sensitivity at half-maximum as Δλ/ΔT = 1.6 nm/K. Quantum efficiency of 0.6–0.7 for the investigated photodiodes was reached without any antireflection coating. For GaSb/GaInAsSb/GaAlAsSb TPV cells, the internal quantum efficiency of 90% was achieved at wavelengths between 1.2 and 1.6 μm. |
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