Recombination luminescence of CsI(Tl) under electron pulse irradiation |
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| Authors: | L Trefilova V Yakovlev A Meleshko N Kosinov |
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| Institution: | 1. Institute for Scintillation Materials, 60 Lenin Avenue, Kharkov 61001, Ukraine;2. Tomsk Polytechnic University, 30 Lenin Avenue, Tomsk 634034, Russian Federation |
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| Abstract: | The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (Ee = 250 keV, t1/2 = 10 ns, j = 2 ÷ 160 mJ/cm2) has been studied. It has been discovered that the slow emission rise is due to hole Vk–Tl0 recombination luminescence at temperature from 100 to 160 K and electron–VkA recombination, where electrons released from single Tl0 at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated. |
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