Atomic configurations during Si incorporation on GaAs(001) in As atmosphere evidenced by reflectance difference spectroscopy |
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| Institution: | 1. Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km. 107, Apdo. Postal 14. Carretera Tijuana-Ensenada, Ensenada, Baja CA, Mexico;2. Facultad de Ciencias Físico Matemáticas, Universidad Autónoma de Nuevo León, 66451, San Nicolas de los Garza, Nuevo León, Mexico;3. Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam;4. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam |
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| Abstract: | The structural ordering of surface atoms during Si deposition on singular and vicinal GaAs(001) surfaces has been studied by reflectance difference (RD) spectroscopy using the difference function between the Si-covered and the bare surface. In dependence on the Si coverage the difference spectra correspond to RD spectra of the bare Si(001)-(1×2) or of the As-terminated Si(001):As(2×1) surface. This finding and the behaviour of RD transients recorded at 3.8 eV photon energy allows to define a (3×2)α phase with Si dimers in the top layer and Ga dimers in the third layer, and a (3×2)β phase with As-dimer rows on top of Si in the second layer. |
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