Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors |
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Authors: | F Sizov A Golenkov D But M Sakhno V Reva |
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Institution: | 1.Institute of Semiconductor Physics,Kiev,Ukraine |
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Abstract: | Room temperature operating n-MOSFETs (n-type metal-oxide silicon field effect transistors) used for registration of sub-THz
(sub-terahertz) radiation in the frequency range ν = 53−145 GHz are considered. n-MOSFETs were manufactured by 1-μm Si CMOS
technology applied to epitaxial Si-layers (d ≈15 μm) deposited on thick Si substrates (d = 640 μm). It was shown that for
transistors with the channel width to length ratio W/L = 20/3 μm without any special antennas used for radiation input, the
noise equivalent power (NEP) for radiation frequency ν ≈76 GHz can reach NEP ∼6×10−10 W/Hz1/2. With estimated frequency dependent antenna effective area Sest for contact wires considered as antennas, the estimated possible noise equivalent power NEPpos for n-MOSFET structures themselves can be from ∼15 to ∼103 times better in the specral range of ν ∼55–78 GHz reaching NEPpos ≈10−12 W/Hz1/2. |
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