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Simulation of a significant increase in the transconductance of MOS transistors due to sectioning of the channel |
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| Authors: | V. A. Gergel’ Yu. V. Gulyaev A. P. Zelenyi M. N. Yakupov |
| Affiliation: | (1) Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 18, Moscow, 103907, Russia |
| Abstract: | |
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