Low-energy electron-enhanced etching of HgCdTe |
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| Authors: | Jaehwa Kim T S Koga H P Gillis Mark S Goorsky Gerald A Garwood John B Varesi David R Rhiger Scott M Johnson |
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| Institution: | (1) Department of Materials Science and Engineering, University of California, 90095 Los Angeles, CA;(2) Raytheon Infrared Operations, 93117 Goleta, CA |
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| Abstract: | Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results
for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variables:
direct current (DC) bias, gas composition, and sample temperature. For this paper, the effects of DC bias (electron energy)
and gas composition (CH4 concentration) are summarized qualitatively, followed by quantitative evidence. Etch rate, the amount of polymer, surface
stoichiometry, and surface roughness have specific relations with each etch variable under competition between pure LE4 and
polymer deposition. |
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| Keywords: | Etching HgCdTe low-energy electron-enhanced etching (LE4) CH4/H2/N2/Ar |
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