The Dynamic Resistance of CdS/CdSe/ZnS Co-Sensitized TiO2 Solar Cells |
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Authors: | Tung Ha Thanh Lam Quang Vinh Huynh Thanh Dat |
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Institution: | 1. Faculty of Physics, Dong Thap University, Cao L?nh, Dong Thap Province, Vietnam 2. University of Science, Vietnam National University—HCM City, Hanoi, Vietnam 3. Vietnam National University—HCM City, Hanoi, Vietnam
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Abstract: | Quantum dots' sensitized solar cells (QDSSCs) can create the high-performance and low-cost photovoltaic in the future. In this study, we synthesized the film of TiO2/CdS/CdSe/ZnS photoanodes by successive ionic layer adsorption reaction (SILAR) method. The absorption spectra, photoluminescent spectra and electrochemical impedance spectra (EIS) of the film TiO2/CdS/CdSe/ZnS photoanodes show that the structure of energy levels in the conduction band (CB) of photoanode materials CdS, CdSe, and ZnS quantum dots (QDs) can absorb a great number of photons in each region and inject stimulated electrons quickly into the conduction band (CB) of TiO2. Furthermore, we also studied the influence of the SILAR cycles on the dynamic resistance, the lifetime of electrons in QDSSCs through Nyquist and Bode. |
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