Dependence of the reflection high-energy electron diffraction oscillation shape on the molecular migration time and the oscillation period

Binominal expressions for the reflection high-energy electron diffraction (RHEED) oscillations during the growth of thin films by molecular beam epitaxy (MBE) were investigated. The dependence of the RHEED oscillation shape on the molecular migration time and the oscillation period was analyzed quantitatively. The peaks and valleys in the calculated oscillation intensities as a function of the oscillation period were in qualitatively reasonable agreement with those obtained from the experimental data. These results can help in controlling the epitaxial film thickness in the growth of films by using the MBE technique.