Preparation and characterization of the LiInSe2 thin films |
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| Authors: | K Kuriyama A Matsubara T Nozaki T Kamijoh |
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| Institution: | (1) College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, 184 Tokyo, Japan;(2) Present address: Research Laboratory, OKI Electric Industry Co., LTD, Hachioji, 193 Tokyo, Japan |
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| Abstract: | Summary
p-type LiInSe2 films have been prepared by the rapid evaporation method onn-type Si andn-type GaP. Various characterization techniques such as the X-ray analysis, the Rutherford backscattering (RBS) analysis and
the scanning electron microscopy were used to evaluated the quality of the films. The rectifications of the preliminary heterojunctions
are demonstrated.
Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16,
1982. |
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| Keywords: | Methods of thin-film deposition |
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