Polarization-controlled leakage current and photovoltaic effect in highly preferentially oriented BiFeO3 film |
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Authors: | Yuxia Sun Yong Zhou Hongri Liu Zhao Xia Man Luo Kai Wan Chengyan Wang |
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Affiliation: | 1. College of Computer Science and Technology, Hubei Normal University, Huangshi, 435002, China 2. College of Physics and Electronic Science, Hubei Normal University, Huangshi, 435002, China 3. Hubei Key Laboratory of Pollutant Analysis & Reuse Technology, Huangshi, 435002, China
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Abstract: | Highly preferentially oriented polycrystalline BiFeO3 thin film was grown on FTO/glass substrate by a sol–gel method annealed at 500 °C. XRD result showed that the film adopts highly (100) preferential orientation. SEM results indicate that the film is composed of large grains of 40–200 nm and the thickness is about 320 nm. Room temperature saturated polarization and large Pr ~55 μC/cm2 were obtained. Leakage current was substantially reduced by the controlling of ferroelectric polarization. Polarization-modulated conduction mechanism was studied. Moreover, substantial photovoltaic effect was observed. |
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