| 90 nm CMOS工艺下p+深阱掺杂浓度对电荷共享的影响 |
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| 引用本文： | 刘凡宇,刘衡竹,刘必慰,梁斌,陈建军. 90 nm CMOS工艺下p+深阱掺杂浓度对电荷共享的影响[J]. 物理学报, 2011, 60(4): 46106-046106 |
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| 作者姓名： | 刘凡宇 刘衡竹 刘必慰 梁斌 陈建军 |
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| 作者单位： | 国防科技大学计算机学院微电子与微处理器研究所,长沙 410073 |
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| 基金项目： | 国家自然科学基金重点项目(批准号:60836004),国家自然科学基金(批准号:61006070)资助的课题. |
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| 摘 要： | 基于3维TCAD器件模拟,研究了90 nm CMOS双阱工艺下p+深阱掺杂对电荷共享的影响. 研究结果表明:改变p+深阱的掺杂浓度对PMOS管之间的电荷共享的影响要远大于NMOS管;通过增加p+深阱的掺杂浓度可以有效抑制PMOS管之间的电荷共享. 这一结论可用于指导电荷共享的加固.关键词：电荷共享单粒子效应+深阱掺杂')" href="#">p+深阱掺杂双极晶体管效应
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| 关 键 词： | 电荷共享 单粒子效应 p+深阱掺杂 双极晶体管效应 |
| 收稿时间： | 2010-04-15 |
Effect of doping concentration in p+ deep well on charge sharing in 90nm CMOS technology |
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| Liu Fan-Yu,Liu Heng-Zhu,Liu Bi-Wei,Liang Bin,Chen Jian-Jun. Effect of doping concentration in p+ deep well on charge sharing in 90nm CMOS technology[J]. Acta Physica Sinica, 2011, 60(4): 46106-046106 |
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| Authors: | Liu Fan-Yu Liu Heng-Zhu Liu Bi-Wei Liang Bin Chen Jian-Jun |
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| Affiliation: | Computer School, National University of Defense Technology, Changsha 410073,China;Computer School, National University of Defense Technology, Changsha 410073,China;Computer School, National University of Defense Technology, Changsha 410073,China;Computer School, National University of Defense Technology, Changsha 410073,China;Computer School, National University of Defense Technology, Changsha 410073,China |
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| Abstract: | This paper deals with the effect of doping concentration in p+ deep well on charge sharing in 90nm dual well CMOS technology. TCAD simulation results show doping concentration in p+ deep well has a more significant effect on charge sharing in PMOS tube than in NMOS tube. By increasing doping concentration of p+ deep well appropriately, the charge sharing in PMOS can be restrained effectively, which is useful for reinforcing the charge sharing. |
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| Keywords: | charge sharing SEE p+ deep well doping concentration bipolar amplification effect |
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