Effect of the excitation level on the thermal quenching and dynamics of the photoluminescence of GaAs/AlGaAs shallow quantum well structures |
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Authors: | M V Kochiev N N Sibeldin M L Skorikov and V A Tsvetkov |
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Abstract: | The effect of the excitation level on the dynamics of heavy-hole exciton photoluminescence in tunneling-isolated GaAs/Al
x
Ga1 − x
As (x = 0.05) shallow quantum wells at temperatures of 5 to 70 K is investigated. It is shown that the exciton lifetimes depend
strongly on the excitation level, while the activation energies characterizing the thermal escape of nonequilibrium charge
carriers from the wells virtually do not. |
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