Low-cost trench isolation technique for reverse blocking IGBT using boron nitride doping wafers |
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| Authors: | M Vellvehi JL Gálvez X Jordà J Millán |
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| Institution: | a Institut de Microelectrònica de Barcelona, Centre Nacional de Microelectrònica (IMB-CNM, CSIC), Campus U.A.B. 08193 Cerdanyola del Vallès (Barcelona), Spain
b Institut de Ciències de l’Espai (IEEC, CSIC), Campus U.A.B. 08193 Cerdanyola del Vallès (Barcelona), Spain |
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| Abstract: | A new fabrication process for IGBT devices with reverse blocking capability (RB-IGBT) is presented in this paper. The trench isolation approach which provides the reverse blocking capability has been implemented using solid source as doping technique (Boron doping wafers), resulting in a low-cost process in both starting material and time-consuming aspects. The feasibility of the fabrication technique has been validated with the electrical measurements of the prototype devices. |
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| Keywords: | IGBT Reverse blocking AC/AC converter Matrix Converter |
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