Influence of supersaturation on the growth of gallium arsenide films in chloride gas-transport systems

An experimental investigation was made into the growth kinetics and relief of the growth surface for the (111)A, (111)B, (110), and (001) planes of gallium arsenide for different degrees of supersaturation determined by the difference between the temperatures of the source and the substrate. The obtained dependences are interpreted on the basis of the basic conclusions of the theory of the growth of crystals.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 89–93, March, 1981.We are grateful to G. M. Ikonnikovaya for assistance in the experiments.